Pioneering the Next Generation of 3D Flash Memory

Kioxia Corporation and Sandisk Corporation have set a new industry benchmark with their breakthrough 3D flash memory innovation, which boasts a remarkable 4.8Gb/s NAND interface speed, enhanced power efficiency, and significantly increased density. Unveiled at ISSCC 2025, this state-of-the-art technology leverages the revolutionary CBA (CMOS directly Bonded to Array) approach to seamlessly integrate one of the most advanced interface standards, Toggle DDR6.0, alongside the novel SCA (Separate Command Address) protocol and PI-LTT (Power Isolated Low-Tapped Termination) technology. This groundbreaking integration not only allows for a 33 percent improvement in NAND interface speed over the current 8th generation devices in mass production but also delivers impressive power savings by reducing input power consumption by 10 percent and output power consumption by 34 percent. The development marks a significant leap forward in optimizing performance and energy usage, as further evidenced by the preview of the 10th generation 3D flash memory, which will increase memory layers to 332 and enhance planar density by 59 percent, paving the way for vastly improved bit density and operational efficiency.

Kioxia’s Chief Technology Officer, Hideshi Miyajima, emphasized the critical importance of this technological advancement, noting that the proliferation of AI is expected to drive an unprecedented increase in data generation, thereby necessitating products that deliver larger capacities, higher speeds, and lower power consumption for future storage solutions. Similarly, Sandisk’s SVP of Global Strategy and Technology, Alper Ilkbahar, highlighted the company’s commitment to addressing the evolving and diverse needs of customers across various market segments with their innovative CBA technology. The collaboration between these two industry leaders is not only set to redefine the performance standards of 3D flash memory but also underscores their ongoing dedication to developing cutting-edge memory solutions that seamlessly combine high performance with capital efficiency, ultimately contributing to the broader evolution of storage technology and the digital society as a whole.